Abstract
To reduce the dielectric loss of TiO2 based ceramics, W6+ ions with high electronegativity, together with Ag+ ions, were selected into Ti site to synthesize (Ag2/5W3/5)xTi1-xO2 ceramics. Remarkably, (Ag2/5W3/5)0.0125Ti0.9875O2 ceramic exhibits a superior dielectric permittivity ∼2.3 × 104 and ∼2.2 × 104, and extremely low loss tangent ∼0.031 and ∼0.025 at 1 kHz and 10 kHz, respectively. Also, the temperature coefficient of the sample was within ±10% from −80 to 200 °C, which completely meets the requirements of X9P capacitors 1 kHz. Notably, the physical origin of high dielectric permittivity and low loss, as well as the dielectric relaxation mechanism at different temperature regions, were explored based on the analysis of complex impedance, XPS and dielectric frequency/temperature spectra. It is believed that the high dielectric permittivity of AWTO ceramics is closely related to the IBLC effect based on semiconductor grains produced by electron hopping between Ti4+ and Ti3+.
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