Abstract
The electrical characteristics of the device manufactured at room temperature were confirmed to have almost the same current value at the forward or reverse voltage, which means that the Ag electrode formed a resistive contact with the P-type semiconductor. This phenomenon is because some of the components in the Ag paste remain on the electrode and affect the Ag and P-type silicon junction. Diodes with Ag electrodes manufactured at a high temperature of 800 degrees also observed higher turn-on voltages in the forward direction than commercially available devices. This is considered to be due to the remaining elements affecting the contact among the components of Ag and Ni paste. In the reverse voltage, the result of the large change in the current value according to the voltage above -7V is due to the tunneling phenomenon. In conclusion, if a paste with a high content of Ag and Ni in the paste is used and the doping of the P-type semiconductor is reduced, a device with more improved electrical characteristics can be realized.
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