Abstract
The effect of impurity distribution and total defect concentration on the transport of nonequilibrium carriers has been estimated and specific features of afterglow in GaN and GaN〈Eu, Sm, Er〉 crystals revealed by measuring delayed near-edge photoluminescence spectra. A decrease in the total carrier concentration is shown to correlate with the afterglow in GaN wurtzite-structure crystals. The influence of additional illumination at a wavelength of 5145 A on the evolution of delayed near-edge photoluminescence spectra was estimated in crystals with different Fermi level positions.
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