Abstract
Current VLSI fabrication technology has progressed rapidly and is pushing toward deep submicron dimension devices. In such small devices, high-field effects become more pronounced, which are velocity saturation, non-stationary transport (ballistic transport and velocity overshoot), impact ionization, and hot-carrier induced degradation of devices. However, many fundamental problems on non-equilibrium carrier transport still remain to be clarified, which makes it difficult to establish a proper guideline for designing small geometry devices. Especially, detailed understanding of high-field effects in future deep submicron devices strongly requires a precise knowledge on non-equilibrium carrier transport.
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