Abstract
Comparison of thermoluminescence (TL) and scintillation light outputs with continuous gamma-ray excitation reveals that the concentration of deep hole traps in ceramic Lu2O3:Eu, tentatively attributed to anion Frenkel defects, is enhanced by reversible radiation damage. Shallow electron and hole traps are tentatively attributed to surface states at grain boundaries. Electrons in shallow traps serve as non-radiative recombination centers. A model for anomalously persistent afterglow following pulsed X-ray excitation is based on a continuous distribution of hole traps inferred from TL following extended gamma-ray irradiation at −135°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
