Abstract
The microhardness characteristics of GaN and GaN/InGaN films epitaxially grown on (0001) sapphire have been investigated using Vickers and Knoop indenters. The variation of H V and H K follows a reverse type of indentation size effect (reverse ISE). The microhardness results have also been analyzed using Meyer's law, Hays–Kendall approach and Proportional specimen resistance (PSR) model. The effect of N + implantation on the microhardness of GaN has also been studied. The implanted sample is more resistant to plastic penetration than the unimplanted one and it is found that implantation enhances the surface hardness. Detailed AFM studies around the indented regions of the GaN and GaN/InGaN give the nature and behavior of the deformation on the surface.
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