Abstract
AbstractA nanocrystalline diamond (NCD) thin film (80 nm) is deposited on a p‐type Si substrate and oxygen terminated by r.f. oxygen plasma. An atomic force microscope (AFM) is used to induce electrostatically charged micrometer‐sized areas on the diamond film by applying a bias voltage on the AFM tip during contact mode scan. Trapped charge is detected by Kelvin force microscopy showing a potential difference of up to 1.4 V. The potential amplitude and spatial distribution are controlled by the bias voltage applied on the tip (±30 V) and scan speed (2–20 µm/s). Contribution of diamond bulk and grain boundaries to the charging effects shows no significant variations. We compare the results with the charging of bare Si substrate.
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