Abstract
ZnO was a promising n-type conductive semiconductor material for dye-sensitized solar cells. Stable and efficient preparation of high quality p-type ZnO films became the main difficulty in current research. In this paper, a nitrogen-doped ZnO columnar film on an indium tin oxide (ITO) substrate was successfully obtained by gas phase method. The absorption of visible light was improved by nitrogen-doped ZnO columnar films. This experiment provided a good strategy for the full utilization of solar energy.
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