Abstract
Interactions of energetic ions with surfaces of silicon carbide have been studied under ultrahigh vacuum conditions in terms of physical and chemical sputtering processes by means of AES-SIMS(IMA) combined systems. The sputtering yield of silicon carbide with hydrogen, helium and argon ions was measured by a volumetric method as a function of target temperature. The sputtering yield was found to have a maximum at around 700° C for hydrogen ions, while it increased monotonically with temperature for helium and argon ions. The differing temperature dependency can be attributed to different sputtering processes.
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