Abstract
Ion beam nitridation of Si(100) as a function of N + 2 ion energy in the range of 2–10 keV has been investigated by in-situ Auger electron spectroscopy (AES) analysis and Ar + depth profiling. The AES measurements show that the nitride films formed by 4–10 keV N + 2 ion bombardment are relatively uniform and have a composition of near stoichiometric silicon nitride (Si 3N 4), but that formed by 2 keV N + 2 ion bombardment is N-rich on the film surface. Formation of the surface N-rich film by 2 keV N + 2 ion bombardment can be attributed to radiation-enhanced diffusion of interstitial N atoms and a lower self-sputtering yield. AES depth profile measurements indicate that the thicknesses of nitride films appear to increase with ion energy in the range from 2 to 10 keV and the rate of increase of film thickness is most rapid in the 4–10 keV range. The nitridation reaction process which differs from that of low-energy (< 1 keV) N + 2 ion bombardment is explained in terms of ion implantation, physical sputtering, chemical reaction and radiation-enhanced diffusion of interstitial N atoms.
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