Abstract
Aerosol-assisted chemical vapour deposition (AACVD) reactions of GaMe3, ZnEt2 and the donor-functionalised alcohol HOCH2CH2OMe (6 equiv.) in toluene resulted in the deposition of amorphous transparent zinc gallate (ZnGa2O4) films at a range of temperatures (350–550 °C). The zinc–gallium oxide films were analyzed by scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray analysis, glancing-angle X-ray powder diffraction (XRD) and optical studies. The optimum growth temperature was found to be 450 °C, which produced transparent films with excellent coverage of the substrate. XPS confirmed the presence of zinc, gallium and oxygen in the films. Annealing these films at 1000 °C resulted in crystalline films and glancing-angle powder XRD showed that a zinc gallate spinel framework with a lattice parameter of a=8.336(5) A was adopted.
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