Abstract

Ethyl and amide zinc thioureides [L1ZnEt]2 (1), [L1*ZnEt]2 (2) and [L1Zn(N(SiMe3)2)]2 (3) have been synthesised from the equimolar reaction of thiourea ligands (HL1 = iPrN(H)CSNMe2 and HL1* = PhN(H)CSNMe2) with diethyl zinc and zinc bis[bis(trimethylsilyl)amide] respectively. New routes towards heteroleptic complexes have been investigated through reactions of 1, 2 and 3 with β-ketoiminates (HL2 = [(Me)CN(H){iPr}–CHC(Me) Created by potrace 1.16, written by Peter Selinger 2001-2019 ]]> O]), bulky aryl substituted β-diiminates (HL3 = [(Me)CN(H){Dipp}–CHC(Me)N{Dipp}] (Dipp = diisopropylphenyl) and HL3* = [(Me)CN(H){Dep}–CHC(Me)N{Dep}] (Dep = diethylphenyl)) and donor-functionalised alcohols (HL4 = Et2N(CH2)3OH and HL4* = Me2N(CH2)3OH) and have led to the formation of the heteroleptic complexes [L1*ZnL3*] (5), [L1ZnL4]2 (6), [L1ZnL4*]2 (7), [L1*ZnL4] (8) and [L1*ZnL4*] (9). All complexes have been characterised by 1H and 13C NMR, elemental analysis, and the X-ray structures of HL1*, 1, 2, 6 and 7 have been determined via single crystal X-ray diffraction. Variable temperature 1H, COSY and NOESY NMR experiments investigating the dynamic behaviour of 5, 6 and 7 have shown these molecules to be fluxional. On the basis of solution state fluxionality and thermogravimetric analysis (TGA), alkoxyzinc thioureides 6 and 7 were investigated as single-source precursors for the deposition of the ternary material zinc oxysulfide, Zn(O,S), a buffer layer used in thin film photovoltaic devices. The aerosol-assisted chemical vapour deposition (AACVD) reaction of 7 at 400 °C led to the deposition of the heterodichalcogenide material Zn(O,S), which was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX), with optical properties investigated using UV/vis spectroscopy, and surface morphology and film thickness examined using scanning electron microscopy (SEM).

Highlights

  • Reports of the deposition of the ternary material zinc oxysul de, Zn(O,S), are far fewer as compared to semiconductors such as zinc oxide, zinc sul de and tin oxide.1–3 This is in part due to Zn(O,S) being an emerging alternative for use as a buffer layer in photovoltaic (PV) devices.4,5 It is more so due to the lack of reports of single source precursors (SSPs) towards Zn(O,S), especially via chemical vapour deposition (CVD) methods, as use of SSPs is mostly limited to binary materials

  • In this work we show that the CVD of heteroleptic zinc complexes with one ligand containing an O-donor atom and another containing an S-donor atom leads to deposition of Zn(O,S)

  • We have investigated the structural and dynamic properties of heteroleptic zinc complexes formed via ethyl and amide zinc thioureides as intermediates, by systematically changing the oxygen donor ligands (Scheme 1), with a view to utilising them as SSPs to the ternary material zinc oxysul de, Zn(O,S)

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Summary

Introduction

Reports of the deposition of the ternary material zinc oxysul de, Zn(O,S), are far fewer as compared to semiconductors such as zinc oxide, zinc sul de and tin oxide.1–3 This is in part due to Zn(O,S) being an emerging alternative for use as a buffer layer in photovoltaic (PV) devices.4,5 It is more so due to the lack of reports of single source precursors (SSPs) towards Zn(O,S), especially via chemical vapour deposition (CVD) methods, as use of SSPs is mostly limited to binary materials. We have investigated the structural and dynamic properties of heteroleptic zinc complexes formed via ethyl and amide zinc thioureides as intermediates, by systematically changing the oxygen donor ligands (Scheme 1), with a view to utilising them as SSPs to the ternary material zinc oxysul de, Zn(O,S).

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