Abstract
The thermal and electrical properties of Zn1.25Sb2Te3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge2Sb2Te5, Zn1.25Sb2Te3 film exhibits a higher crystallization temperature (∼200°C), greater activation energy (2.71eV), and better data retention of 10 years at 105°C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb2Te3 component is thus mainly responsible for the phase transition in Zn1.25Sb2Te3 alloys.
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