Abstract
In this paper, we demonstrate the improved performance of light-emitting diodes (LED) with AlGaInN electron blocking layer (EBL) by inserting a p-type InGaN layer in front of it. The performances of three LED structures with conventional AlGaN EBL, AlGaInN EBL and AlGaInN EBL coupled with an inserted p-type InGaN layer are numerically studied. The output power performance is significantly improved and the efficiency droop could reduce to only 4% when a p-type InGaN layer was inserted in front of the AlGaInN EBL, which is responsible for the reduced electron leakage and enhanced hole injection efficiency, as well as alleviated electrostatic fields in the quantum wells.
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