Abstract
Dual-wavelength light-emitting diodes (DW-LEDs) with dip-shaped quantum wells have been studied by numerical simulation. The emission spectra, light output power, carrier concentration in the quantum wells and internal quantum efficiency are investigated. The simulation results indicate that the DW-LEDs with dip-shaped quantum wells perform better than conventional LEDs with rectangular quantum wells in terms of light output power, leakage current and efficiency droop. These improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the dip-shaped quantum wells.
Highlights
Nitride-based light-emitting diodes (LEDs) have attracted considerable interest because of their lower power consumption, small size, longer lifetime and eco-friendly nature [1,2]
The results reveal that the Dual-wavelength light-emitting diodes (DW-LEDs) with dip-shaped quantum wells (QWs) can overcome the issues mentioned above
2 Results and discussion current for both LED structures, which indicates that the difference in light output power between the two structures is small at low injection currents, but the difference increases sharply with increasing injection current
Summary
Nitride-based light-emitting diodes (LEDs) have attracted considerable interest because of their lower power consumption, small size, longer lifetime and eco-friendly nature [1,2]. Dual-wavelength light-emitting diodes (DW-LEDs) with dip-shaped quantum wells have been studied by numerical simulation.
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