Simulation of the Advantages in Dual-Wavelength Light-Emitting Diodes by Changing the Last Two GaN Barriers into InGaN Barriers

Abstract

The advantages of dual-wavelength light-emitting diodes (DW-LEDs) by changing the last two GaN barriers into In GaN barriers have been studied. The internal quantum efficiency (IQE), carrier concentration in quantum wells (QWs), energy band and emission spectra are investigated. The simulation results indicate that the new designed DW-LED with the last two GaN barriers being replaced by polarization-matched In GaN barriers has better performance than that without any change, which result from the reduced polarization effect, the enhancement of electron confinement and the lower potential barrier height for hole injection. The simulation results also show that the efficiency droop is markedly reduced and the luminous intensity in shallow wells is greatly enhanced when the last two GaN barriers are replaced by In GaN barriers.