Abstract
This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
