Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices

Abstract

Dopant profiling and 2D imaging of device cross-sections have a strategic relevance for the development and for the failure analysis of new devices based on silicon carbide (SiC). Due to the extreme physical properties of SiC, the common electrical dopant profiling techniques have been shown to be poorly reliable. In this work, we report the latest advances in dopant profiling and imaging of SiC by the use of scanning electron and scanning probe microscopy techniques.