Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching

Abstract

Scanning Electron Microscopy (SEM) combined with selective electrochemical etching was used to assess two-dimensional (2-D) dopant profiles in p+/n junctions that formed by using BF2 implantation followed by annealing. It was discovered that the electrochemically delineated junction depth (dj) increased with an increase in the BF2 implantation energy. It was also found that, considering the mechanism of selective electrochemical etching, dj represents the junction edge that corresponded to the electrically-activated B atoms. The simulated 2-D dopant profiles of the experimental conditions were directly compared with the SEM results, and the implications of the discrepancies are discussed in this paper.