Abstract
Silicon carbide (SiC) is the only compound semiconductor whose native oxide is SiO2. This places SiC in a unique position to compete with silicon in applications involving high power, high voltages, or high temperatures. SiC MOS technology has made substantial progress in recent years. This article aims to summarize the present status of this field, including MOS analysis techniques, oxidation procedures, experimental results, reliability considerations, alternative insulators, and remaining questions. In addition, we hope to convince the reader of the following: 1. Great care must be exercized in interpreting MOS data on wide bandgap semiconductors. This is due to the extremely long response times for interface states deep in the bandgap. 2. Recent results do not support the argument that interface quality on p-type SiC is inferior to that of n-type.
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