Abstract
Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their having the highest power density, high operating voltages, and a long lifetime. Standard high-performance ferroelectric-based ES devices are formed of complex-composition perovskites and require precision, high-temperature thin-film fabrication. The discovery of ferroelectricity in doped HfO2 in 2011 at the nanoscale was potentially game-changing for many modern technologies, such as field effect transistors, non-volatile memory, and ferroelectric tunnel junctions. This is because HfO2 is a well-established material in the semiconductor industry, where it is used as a gate dielectric. On the other hand, (pseudo)binary HfO2 and ZrO2-based materials have received much less attention for ES capacitors, even though antiferroelectric HfO2 and ZrO2-based thin films show strong promise. This Focus Review summarizes the current status of conventional polymer and perovskite ferroic-based ES. It then discusses recent developments in, and proposes new directions for, antiferroelectric and ferroelectric group IV oxides, namely HfO2 and ZrO2-based thin films.
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