Abstract
In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device- and system-level development, is clearly one of the most critical issues. This article broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.
Highlights
Since the first report by Tsumura et al in 1986 [1], organic field-effect transistors (OFETs) have been considered as a key enabler for flexible and printed electronics [2]–[7]
We briefly introduce the basic concepts of compact modeling and OFETs to further stimulate synergistic endeavors, which will serve as a prerequisite to understanding reported models that will be highlighted in Sections III and IV
While the simplification and fitting capability is a key to compact modeling, introducing too many empirical functions and parameters with no or weak physical meaning can eventually undermine the entire validity of the model
Summary
Since the first report by Tsumura et al in 1986 [1], organic field-effect transistors (OFETs) have been considered as a key enabler for flexible and printed electronics [2]–[7]. We identify the lack of a standard compact model as one of the most important issues that need to be addressed, to generate a significant research momentum on circuit design and to motivate a more balanced and sustainable development chain for OFET technologies [16]–[18]. A major strategy will be the clarification of the model development flow coupled with apparent advantages and limitations of current approaches.
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