Advances in CdZnTeSe for Radiation Detector Applications

Utpal N Roy,Ralph B James,Yonggang Cui,Giuseppe S Camarda

doi:10.3390/radiation1020011

Utpal N Roy, Ralph B James + Show 2 more

Open Access

https://doi.org/10.3390/radiation1020011

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Abstract

Detection of X- and gamma-rays is essential to a wide range of applications from medical imaging to high energy physics, astronomy, and homeland security. Cadmium zinc telluride (CZT) is the most widely used material for room-temperature detector applications and has been fulfilling the requirements for growing detection demands over the last three decades. However, CZT still suffers from the presence of a high density of performance-limiting defects, such as sub-grain boundary networks and Te inclusions. Cadmium zinc telluride selenide (CZTS) is an emerging material with compelling properties that mitigate some of the long-standing issues seen in CZT. This new quaternary is free from sub-grain boundary networks and possesses very few Te inclusions. In addition, the material offers a high degree of compositional homogeneity. The advancement of CZTS has accelerated through investigations of the material properties and virtual Frisch-grid (VFG) detector performance. The excellent material quality with highly reduced performance-limiting defects elevates the importance of CZTS as a potential replacement to CZT at a substantially lower cost.

Highlights

Radiation detectors, especially for the X- and gamma-ray range, are being developed and utilize the advantages of semiconductor radiation detectors operating at room temperature
We report the advancement of Cd1−xZnxTe1−ySey (x = 0.1, y = 0.02) by the traveling heater method (THM) technique and discuss the performance of Frisch-grid detectors fabricated from as-grown CZTS ingots
The long-standing issues suffered by Cadmium zinc telluride (CZT) pertaining to the presence of high concentrations of performance-limiting defects due to poor thermophysical properties motivated the researchers to find a suitable alternative material with better detector performance at a lower cost of production

Summary

Introduction

Especially for the X- and gamma-ray range, are being developed and utilize the advantages of semiconductor radiation detectors operating at room temperature. The performance and yield of high-quality detector-grade materials are still limited by the presence of high concentrations of randomly distributed performance-limiting defects, such as Te inclusions and sub-grain boundary networks [5]. These defects act as trapping centers, severely hindering the localized charge transport and imposing severe spatial inhomogeneity in the charge transport characteristics of the detector, which adversely affects the device performance [5,6,7,8].

Methods and Materials

Summary