Advancements in two-dimensional Ti3C2 MXene interfaced semiconductors for room temperature NO2 gas sensing: A review

Abstract

Nowadays, there is a growing global demand for high-performance room temperature gas sensing devices. In this context, we aim to explore the advancements in two-dimensional (2D) Ti3C2 MXene role for toxic NO2 gas sensing at room temperature. The distinctive advantages of 2D Ti3C2 MXene, including high electrical conductivity, ample surface area, surface termination groups, and layer structure have garnered significant attention towards NO2 gas adsorption. Further, the compatible regularity of Ti3C2 MXene at the interface of various semiconductors directed the development of potential room-temperature NO2 gas sensing devices. Further, the leveraging gas sensing (selectivity, response, and recovery) characteristics become increasing attention on Ti3C2 MXene/semiconductor interfaces than pure Ti3C2 MXene. Elaborative control on the depletion layer through the Schottky barrier formation distinguished the room temperature NO2 gas sensing and led to the evolution of electrophilic NO2 gas molecule interaction. Remarkably, the great processability of Ti3C2 MXene/semiconductor interface is sensitive to the low detection limit (LOD) of NO2 gas at parts per billion (ppb) conditions. On the other hand, this review demonstrates the room temperature optoelectronic NO2 gas sensing capabilities of Ti3C2-based composites for emphasizing selectivity and recovery. Interestingly, the Ti3C2 MXene/semiconductor composite builds immunity against the atmosphere humidity and achieves stable NO2 gas sensing. Finally, we have provided conclusions and key points to advance the research on room temperature NO2 gas sensing of Ti3C2 integrated semiconductors.