Advancement and Challenges of Field Effect Transistors based on Multi-gate Transistor

Abstract

The advancement and challenges of field effect transistors are based on multi-gate transistors from the perspective of structure and material. Multi-gate field-effect transistors (Multi-gate FET) have steeper sub-threshold slopes, which can reduce the short channel effect and improve mobility and drive current. A fin field-effect transistor (FinFET) and gate-all-around field-effect transistor (GAAFET) are attractive multi-gate structures most compatible with today’s standard machining technologies. As the future moves towards smaller processes, FinFET and GAAFET processes limit the spacing between n-to-p devices. In order to increase the possibility of transistor miniaturization, innovative structures such as Forksheet FET and Complementary-FET (CFET) have been proposed.