Abstract
This work is concerned with the quantum structure of resonant tunneling diodes, which exhibits intrinsic instability that can be exploited for the development of high-speed, high-frequency devices. The article examines in detail the physics underlying the non-liner instability, in both a one-band model and a multiple-band model. The theoretical basis of the description of electronic processes in such structures are described in some detail in terms of nonequilibrium Green's functions. Also presented here is a semi-phenomenological model of the resonant tunneling diode based on nonlinear circuit theory. Recent works and progresses in this and related areas are summarized here as well.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of High Speed Electronics and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
