Abstract
300 mm SOI wafers with sub-100nm thick active Si layers are currently produced in large quantities and used in advanced microprocessor circuits. To further enhance the performance of the next generation of devices, strained Si layers on insulator are being developed. The lattice mismatch between silicon and SiGe alloys, combined with layer transfer through the Smart Cut/spl trade/ technology allow forming two types of strained Si - strained Si on SiGe on insulator, known as SGOI, and strained Si directly on insulator, known as sSOI. Fabrication methods and wafer characteristics for SOI, SGOI, and sSOI are discussed here.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
