Advanced Process Monitoring Through Fault Detection and Classification for the Process Development of Tantalum Nitride Thin-Film Resistors

Abstract

This paper discusses the optimization of an advanced process monitoring scheme with interdicting fault detection and classification (FDC) capabilities that improved the control over the process development of Tantalum Nitride thin film resistors (TaN TFR). Its implementation in a high-volume manufacturing environment resulted in a reduction of misprocessed wafers, shorter equipment downtime, higher throughput, enhanced process visibility, and yield improvement. Along with optimizing FDC capabilities, implementing a short loop sampling plan reduced the turnaround time for early electrical characterization by a factor of four; this allowed for timely inline adjustments within the fabrication process to tighten the statistical process control (SPC) over the distribution of the process control monitor (PCM) TaN resistor value and improve thin film uniformity.