Advanced on-chip polysilicon CMOS analog and driver circuit technology for intelligent discrete devices

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In this paper, we investigate the analog and driver circuit performances of 0.8 /spl mu/m gate length polysilicon CMOS fabricated on a thermal oxide film. Especially, we report the capability of load short-circuit protection circuit and high-side driver circuit. For the first time, it is found that the improved polysilicon analog circuits works sufficiently rapidly to protect high voltage power devices. It was experimentally confirmed that a 20 A/600 V high power IGBT can be driven and safely protected from load short-circuit failure by the polysilicon circuits within 200 nsec. It was also shown that a polysilicon high-side driver circuit with a charge pump successfully switched on a 25 A/60 V MOSFET within 130 /spl mu/sec.