Abstract
We present a new threshold-voltage (Vth) control technique for fully-silicided metal/high-k gate stacks which are suitable for 45nm-node LOP and LSTP CMOS. The key is the phase control of FUSI Ni-silicide (PC-FUSI) by changing Ni film thickness prior to silicidation anneal. As a result, Ni3Si and NiSi2 are formed whose effective workfunctions (WFs) on HfSiON are found to be 4.8eV and 4.4eV, respectively, being largely displaced from Si-midgap by {plus minus}0.2eV. Meanwhile, the dopant segregation method, known to be successful in Vth-control of NiSi on SiO2, did not work on HfSiON. With Ni3Si-PFET and NiSi2-NFET transistors, a wide range of Vth-tuning is achieved coping with both LSTP and LOP requirements. At the same time, leakage suppression merit is better than the 45nm-node targets at electrical thickness (Tinv) around 2.0nm. Also, our PC-FUSI devices show performance improvement and sufficient long term reliability.
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