Abstract
As the capacitor size greatly decreases from 1.44 in 4Mb to 0.44 w m 2 in 32Mb FRAM, the hydrogen-damage is severely increased, thus giving rise to the difficulty in protecting the ferroelectric capacitor from the hydrogen attack by using conventional encapsulating barrier layers (EBL). Therefore, it is strongly required to reduce the hydrogen-induced degradation of very small ferroelectric capacitor during the backend integration process. In this paper, we developed double EBL technology by covering whole ferroelectric capacitors again after the Cap-EBL process. The Al 2 O 3 ILD-EBL layer was prepared again after depositing inter-layer dielectrics (ILD) layer, thus eliminating further hydrogen damage during inter-metal dielectrics (IMD) process. Using the double EBL technology, the fully integrated ferroelectric capacitor for 32Mb FRAM exhibits excellent ferroelectric properties such as remnent polarization of 15 w C/cm 2 at 3V. As a result, novel hydrogen-damage free 0.25 w m 15F 2 32Mb FRAM was successfully developed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
