Abstract
Advanced SiC planar-gate power MOSFET s have been successfully manufactured in a 6-inch commercial foundry with device structures optimized for operation with gate drive voltage of 10 V, compatible with gated drive voltage for Si superjunction products. The electrical characteristics of three advanced SiC MOSFET options are described in this article and compared with those of a state-of-the art Si superjunction MOSFET . The new advanced SiC power MOSFET s are demonstrated to exhibit superior on -state and switching losses with significantly better body-diode reverse recovery performance. Their short-circuit withstand time is also found to be significantly longer than typical commercially available planar-gate SiC power MOSFET s. These improved characteristics make the advanced SiC power MOSFET s suitable replacements for Si superjunction transistors to enhance high frequency circuit performance.
Published Version
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