Abstract
A vertical trench gate 600 V PT (Punch Through) IGBT structure with a new concept of thin substrate wafer with a low dose n-buffer and a transparent p-emitter is proposed to realize an excellent trade-off relation between the device on-state voltage and the switching speed. In this paper, we have fabricated and evaluated 600 V/150 A rated thin wafer PT IGBT in a 60 /spl mu/m thin silicon substrate. It was experimentally confirmed that 60 /spl mu/m PT IGBTs with a transparent p-emitter have an excellent trade-off relation for room temperature and 125/spl deg/C. Especially the fabricated 60 /spl mu/m thin 600 V PT IGBTs have realized an on-state voltage as low as 1.23 V at 150 A/cm/sup 2/ current density with an extremely short fall-time of 60 ns for 25/spl deg/C.
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