Abstract
The failure of punch-through (PT) IGBTs to reach forward conduction mode at cryogenic temperatures has already been observed in previous work, but no explanation has been given. In this work detailed experimental data collected for PT IGBTs are presented. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range from 4.2 to 295 K. The phenomenon under analysis is presented. Connections between the failure of PT-IGBTs and other phenomena are highlighted. Physical behavior at low junction temperatures is analyzed and the failure at cryogenic temperatures is discussed and analyzed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.