Abstract

As semiconductor devices continue to be highly integrated and their geometries also continue to shrink, not only particulate and metallic contamination but also trace organic contamination adsorbing on the surface of silicon wafers has been found to have an increasingly detrimental impact on the performance and yield of semiconductor products. It has been shown that such organic contaminants have deleterious effects not only on the gate oxide integrity (GOI) [1–7] but also in the CVD step [8].

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