Abstract
The interaction of nitrogen atoms with cleaved GaAs(110) surfaces was studied at room temperature by using Auger electron, low-energy electron energy-loss, and uv photoemission spectroscopy (AES, LEELS, UPS) as well as a Kelvin probe. For reasons of comparison AES and EELS were also applied to a GaN(0001) sample. At low exposures a chemisorption of the nitrogen atoms at the GaAs(110) surface was observed. For larger exposures, the experimental results obtained are indicating the formation of a GaN surface layer via an anion exchange.
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