Adjustment Cu3Si growth in the interface of annealed Cu-Zr alloy films/Si substrate to form inverted pyramid structure

Abstract

Abstract Cu, Cu-Zr and Cu(N)/Cu-Zr films were deposited on Si (1 0 0) substrate by magnetron sputtering. The effect of Zr and the CuN covering film on the diffusion behaviors between Cu-Zr alloy film and Si substrate were investigated. Results show that the addition of Zr and the Cu(N) covering film have significant influences on the shape and quantity of Cu3Si compounds. In contrast to the long strip shape of Cu3Si in the annealed Cu/Si and Cu-Zr/Si systems, a large number of octahedral Cu3Si compounds formed in the Cu(N)/Cu-Zr/Si after annealing at 500 °C. It is worth noting that inverted pyramid structures on Si surface with large specific surface area can be obtained by removing Cu3Si and films. This work provides a new method for the surface modification of single-crystal Si.