Adjusting Cu layer thickness of ITO/Cu/ITO film to improve electrochemical corrosion of GOA unit

Abstract

Mine monitoring system relies on display to in-situ monitor underground environment, but electrochemical corrosion from through-hole film in gate driver on array unit may threaten life safety of underground personnel. This work thus attempts to prepare indium tin oxide/copper/indium tin oxide film on through-hole, and adjust Cu layer thickness to block vapor with proper etching slope angle, so as to improve the electrochemical corrosion resistance. The results show that, surface of film with 841-nm thick Cu layer has few holes, and its particle size is uniform. The film exhibits superior electrical characteristics (Rs=0.024 Ω/sq) and appropriate etching slope angle (67°). The 841-nm film also has larger polarization resistance (3871 Ω) and smaller corrosion current density (1.296 ×10−5 A/cm2). Noticeably, a display screen assembled with 841-nm film exhibits optimal electrochemical corrosion resistance, and can pass field test of double 85 conditions (85 °C with relative humidity of 85 %), presenting a long duration of 1000 h. A correlation mechanism of Cu thickness on the electrochemical corrosion resistance is also proposed to inspire development of high-performance display in safe.