Abstract
Carbon nanowalls (CNWs), which are used as electrodes for secondary batteries in energy storage systems (ESSs), have the widest reaction surface area among the carbon-based nanomaterials, but their application is rare due to their low adhesion with substrates. Indium tin oxide (ITO), a representative transparent conducting oxide (TCO) material, is widely used as the electrode for displays, solar cells, etc. Titanium nitride (TiN) is a well-used material as an interlayer for improving the adhesion between two materials. In this study, ITO or TiN thin films were used as an interlayer to improve the adhesion between a CNW and a substrate. The interlayer was deposited on the substrate using a radio frequency (RF) magnetron sputtering system with a four-inch TiN or ITO target. CNWs were grown on the interlayer-coated substrate using a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system with a mixture of methane (CH4) and hydrogen (H2) gases. The adhesion of the CNW/interlayer/substrate structure was observed through ultrasonic cleaning.
Highlights
Many studies on energy storage systems (ESSs) are under way for the development of renewable energy for buildings [1,2,3]
After a 5 × 5 mm2 mask was placed on the Indium tin oxide (ITO)- and Titanium nitride (TiN)-deposited Si wafers in the microwave-plasma-enhanced chemical vapor deposition (MPECVD)
The minor particles that were visible on the surface were from the platinum (Pt) coating that was done to achieve a high resolution prior to field emission scanning electron microscopy (FESEM) shooting
Summary
Many studies on energy storage systems (ESSs) are under way for the development of renewable energy for buildings [1,2,3]. ITO is a typical transparent conducting oxide (TCO) and is intensively studied for displays and liquid crystal panels [18,19,20], among others, while TiN is a typical interlayer [21,22] with excellent thermal stability and chemical safety, and with high fine hardness. These two widely used materials were deposited to a thickness of about 150 nm using a four-inch. The electrical properties of the CNW grown directly on the substrate were compared with those of the CNW grown on the interlayer before and after ultrasonic cleaning, using Hall measurement
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