Abstract
Abstract Effects of growth condition of titanium interlayer and sputter-etching before its deposition on adhesion of titanium nitride films grown onto high speed steel substrates by RF (13.56 MHz) plasma-assisted chemical vapor deposition were investigated. Adhesion of TiN film increased with sputtering pressure for deposition of the interlayer. Preferred orientation (002) of the interlayer resulted in poor adhesion of TiN film. Proper sputter-preetching gave rise to adhesion up to 45 N and the film demonstrated a cohesive flaking mode during scratch test.
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