Abstract
Mold die sticking has been thought to be caused by the increase in die surface roughness and surface area due to silica filler abrasion. Insitu results of semiconductor manufacturers showed a strong dependency on the make of EMC (epoxy molding compound); indicating chemical interaction was apt to be also functioning as a major mechanism. PSII (plasma source ion implantation) using O 2 , N 2 , and CF 4 was applied to modify sample surface condition from hydrophilic to hydrophobic and vice versa. By comparing surface energy quantified by contact angle and surface ion coupling state analyzed by Auger with pull-out strength, the governing mechanism for the sticking issue was determined to be a result of complex of mechanical and chemical factors.
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