Abstract
The growth and adhesion of cubic boron nitride:carbon (c-BN:C) film were investigated using Fourier transform infrared spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy. c-BN:C films were prepared on a Si(111) substrate by a helicon wave plasma chemical vapor deposition process using borazine, methane, and hydrogen beyond the critical substrate bias and temperature of −250 V and 450 °C, respectively. The improved adhesion of c-BN:C film with the addition of CH4 and hydrogen resulted from the simultaneous reduction of residual compressive stress and nonbonded (free) boron reaction with atmospheric water vapor. In addition, postheat treatment at 800 °C could further reduce the residual compressive stress in the c-BN:C film. The repetition technique of the combinative process of carbon and hydrogen addition together with postheat treatment (multistep deposition method) enabled the growth of thick c-BN:C film of ∼1 μm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
