Abstract
Japan's Research and Development (R&D) activities on high-performance III–V compound space solar cells are presented. Studies of new CuInGaSe2 thin-film terrestrial solar cells for space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple-junction space solar cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual-junction solar cells and CuInGaSe2 thin-film solar cells, and radiation response of three component sub-cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual-junction cells and CuInGaSe2 thin-film cells by space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd.
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