Abstract
The good quality CuInGaSe2 (CIGS) thin film solar cells were fabricated on molybdenum metal coated soda lime glass substrate. Three-stage co-evaporation method was utilized for the fabrication of high quality p-type CIGS thin film absorber layer. Further, n-type CdS layer, high resistive intrinsic ZnO layer and transparent conducting AlZnO layers were fabricated by CBD method and vacuum sputtering methods. We made three various top metal sandwich grid patterns, i.e. Al, Al/Cu and Cu/Al which were utilized to investigate the metal sandwich layer oriented efficiency enhancement superiority on CuInGaSe2 thin film solar cells. The investigated specific CIGS solar cell device efficiency with respect to various top metal grid sandwich patterns is presented and discussed.
Highlights
High energy photo conversion efficiency of CuInGaSe2 (CIGS) solar cell devices has been largely issued so far
Three-stage co-evaporation method was utilized for the fabrication of high quality p-type CIGS thin film absorber layer
Top and bottom metal grid pattern played very important role for efficiency enhancement, because more active charge carrier collection and all of outcome participated charge carriers successive recombination mainly depend on the chosen bottom and top metal grid pattern, so that in the present research work, we concentrated some different types of top metal sandwich grid pattern for the possible CIGS solar cell efficiency enhancement
Summary
High energy photo conversion efficiency of CuInGaSe2 (CIGS) solar cell devices has been largely issued so far. The good quality CuInGaSe2 (CIGS) thin film solar cells were fabricated on molybdenum metal coated soda lime glass substrate. Three-stage co-evaporation method was utilized for the fabrication of high quality p-type CIGS thin film absorber layer.
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