Abstract
Oxidation behavior of chemically vapor‐deposited SiC in CO─CO2 atmospheres (0.1 MPa) was investigated using a thermogravimetric technique at temperatures from 1823 to 1923 K. Active or passive oxidation was observed depending on temperature and CO2/CO partial pressure ratio (Pco2/Pco). The critical Pco2/Pco value for the transition was 1O2 times as large as a theoretical value calculated from the Wagner model. In the passive oxidation above 1873 K, SiO2 bubbles were grown. The expansion and rupture of bubbles caused cyclic rapid mass gain and mass loss.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
