Activation Process and Mechanism of ZrCoCe Getter Films

Abstract

In order to study the activation process and mechanism of ZrCoCe, highly porous ZrCoCe getter films were grown by the DC magnetron sputtering method. The effect of activation temperature on the surface composition of the porous ZrCoCe getter films were studied by X-ray photoelectron spectroscopy (XPS). The results shows that the surface of air-exposed porous ZrCoCe film is covered with H2O, CO2 and hydrocarbons, both Zr and Ce exist in the oxidized state, and zirconium oxide starts to reduce at 300 °C. The activation process also results in a sizable Co segregation at surface. In addition, zirconium carbide can be found in the subsurface region of the film after thermal activation treatment.