Abstract
Boron was implanted into the p-type Hg0.7Cd0.3Te epitaxial crystals. The implantation was carried out using a fluence of 1.45×1015 cm−2 and an energy of 100 keV. The implanted specimens, as well as unimplanted ones, were annealed without encapsulation by one-zone annealing in an atmosphere of mercury vapor supplied from liquid mercury at temperatures from 250–500 °C. From the annealing of unimplanted specimens, a p-n transition at 350 °C is observed. On the other hand, from the annealing of implanted specimens, it is found that the n-type conductivity induced by implantation damage is gradually reduced with the increase of annealing temperature until a minimum appears around 350 °C, and then increases again. An enhancement of n-type conductivity can be further observed from annealing under a reduced pressure of mercury. A similar result is also obtained from the annealing of implanted specimens using a HgTe compound as the mercury reservoir instead of liquid mercury. The results suggest that the implanted borons become activated dopants after annealing at high temperature. A mechanism on the activation of boron in HgCdTe is thus proposed, and the experimental results can be satisfactorily explained by the mechanism.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
