Abstract
Boron was implanted in p-type Hg1−xCdxTe with 0.23⩽x⩽0.28. The implantation was carried out using fluences between 1×1013 and 7×1016 B+ cm−2 and ion energies of 120 and 350 keV with the samples either at room temperature or at 80 K. For fluences of more than 1×1013 B+ cm−2 a saturation of the electron concentration at a level of 3×1018 cm−3 was obtained. No carrier freezeout was found in the implanted layers at temperatures between 10 and 300 K. The n-type conductivity persisted after annealing for 30 min at 150 °C and disappeared after annealing at 300 and 500 °C for 30 min. The boron concentration profiles analyzed by secondary ion mass spectrometry were found to be unaffected by annealing. The results suggest that the n-type conduction is caused by implantation damage and that the implanted boron is bound in immobile complexes and does not become effective as a donor.
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