Abstract
The phosphorus-doped microcrystalline silicon thin films were deposited by PECVD (Plasma-enhanced chemical vapor deposition), the activation energy of thin films were measured by activation energy testing equipment. The activation energy of samples with different doping concentration and different depositing temperature were studied. The results showed that: the activation energy of phosphorus-doped microcrystalline silicon thin films lesser than intrinsic films. The unit of activation energy is meV. Crystalline volume fractions have little influence on activation energy when thin films have a good crystalline volume fraction, impurity effect plays an important role on the conductivity.
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