Abstract
P-type hydrogenated microcrystalline silicon (muc-Si:H) thin films (~100 nm) were deposited using plasma enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150degC. RF power density and pressure were varied among films. These films reach a dark conductivity (sigma <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> ) of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> S/cm, activation energy (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</sub> ) of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> eV and crystalline volume fraction (X <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) of > 50 %. The structure of these films is composed of nano-sized crystallites embedded in an amorphous matrix, resulting in wide optical bandgap energies (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">opt</sub> ). Using the Scherrer's formula, grain sizes were estimated to be < 20 nm.
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